Defect-formation processes in silicon doped with manganese and germanium
Autor: | Abdurakhmanov, K. P., Utamuradova, Sh. B., Daliev, Kh. S., Tadjy-Aglaeva, S. G., Ergashev, R. M. |
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Zdroj: | Semiconductors. Jun98, Vol. 32 Issue 6, p606. 2p. |
Databáze: | Academic Search Ultimate |
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