Defect-formation processes in silicon doped with manganese and germanium

Autor: Abdurakhmanov, K. P., Utamuradova, Sh. B., Daliev, Kh. S., Tadjy-Aglaeva, S. G., Ergashev, R. M.
Zdroj: Semiconductors. Jun98, Vol. 32 Issue 6, p606. 2p.
Databáze: Academic Search Ultimate