First-principles prediction of the structural and electronic properties of zinc blende GaN x As1−x alloys.

Autor:	Ziane, Mohamed Issam1 issam1308@yahoo.fr, Bensaad, Zouaoui1, Ouahrani, Tarik2,3, Labdelli, Boutaleb4, Nacer, Hamza Ben1, Abid, Hamza1
Zdroj:	Materials Science in Semiconductor Processing. Aug2013, Vol. 16 Issue 4, p1138-1147. 10p.
Databáze:	Academic Search Ultimate
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect