On the kinetics of the generation of point defects in the Si–SiO[sub 2] system.
Autor: | Kropman, D., Dolgov, S., Kärner, T. |
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Zdroj: | Applied Physics A: Materials Science & Processing. 1996, Vol. 62 Issue 5, p469. 4p. |
Databáze: | Academic Search Ultimate |
Externí odkaz: |