Electrical Activity of Dislocations and Point Defects of Deformation Origin in Cdx Hg1-x Te Crystals.

Autor: Gasan-zade, S.G., Stary&icaron;, S.V., Strikha, M.V., Shepel'ski&icaron;, G.A.
Zdroj: Semiconductors. Jan2003, Vol. 37 Issue 1, p6. 9p.
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