Influence of initial growth pressure on the optical properties of Si-doped nonpolar a-plane GaN grown with different doping levels

Autor:	Man Song, Keun1, Min Kim, Jong1, Soo Shin, Chan1, Gi Ko, Chul1, Koun Cho, Hyung2, Ho Yoon, Dae2, Min Hwang, Sung3, Kim, Hogyoung4 hogyoungkim@gmail.com
Zdroj:	Journal of Crystal Growth. May2013, Vol. 370, p22-25. 4p.
Databáze:	Academic Search Ultimate
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect