Field-assisted emission in AlGaN/GaN heterostructure field-effect transistors using low-frequency noise technique.

Autor: Kayis, Cemil1, Zhu, C. Y.1, Wu, Mo1, Li, X.1, Özgür, Ümit1, Morkoç, Hadis1
Zdroj: Journal of Applied Physics. Apr2011, Vol. 109 Issue 8, p084522. 5p. 2 Diagrams, 3 Graphs.
Databáze: Academic Search Ultimate