Field-assisted emission in AlGaN/GaN heterostructure field-effect transistors using low-frequency noise technique.
Autor: | Kayis, Cemil1, Zhu, C. Y.1, Wu, Mo1, Li, X.1, Özgür, Ümit1, Morkoç, Hadis1 |
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Zdroj: | Journal of Applied Physics. Apr2011, Vol. 109 Issue 8, p084522. 5p. 2 Diagrams, 3 Graphs. |
Databáze: | Academic Search Ultimate |
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