Determination of the heterojunction type in structures with GaAsSb/GaAs quantum wells with various antimony fractions by optical methods.

Autor: Morozov, S.1 more@ipm.ras.ru, Kryzhkov, D.1, Gavrilenko, V.1, Yablonsky, A.1, Kuritsyn, D.1, Gaponova, D.1, Sadofyev, Yu.2, Zvonkov, B.3, Vihrova, O.3
Zdroj: Semiconductors. Nov2012, Vol. 46 Issue 11, p1376-1380. 5p.
Databáze: Academic Search Ultimate