Design of Higher-k and More Stable Rare Earth Oxides as Gate Dielectrics for Advanced CMOS Devices.
| Autor: | Yi Zhao1 yzhao@nju.edu.cn |
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| Zdroj: | Materials (1996-1944). Aug2012, Vol. 5 Issue 8, p1413-1438. 26p. 2 Diagrams, 2 Charts, 15 Graphs. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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