Damage profiles determination in ultra-shallow B+ implanted Si by triple crystal X-ray diffraction and transmission electron microscopy

Autor: Bocchi, C.1 bocchi@maspec.bo.cnr.it, Germini, F.1, Mukhamedzhanov, E.Kh.2, Nasi, L.1, Privitera, V.3, Spinella, C.3
Zdroj: Materials Science & Engineering: B. Apr2002, Vol. 91/92, p457. 5p.
Databáze: Academic Search Ultimate