Transient electro-thermal characterization of Si–Ge heterojunction bipolar transistors

Autor: Sahoo, Amit Kumar amit-kumar.sahoo@ims-bordeaux.fr, Weiß, Mario1, Fregonese, Sébastien1, Malbert, Nathalie1, Zimmer, Thomas1
Zdroj: Solid-State Electronics. Aug2012, Vol. 74, p77-84. 8p.
Databáze: Academic Search Ultimate