Nanostructured graded-index antireflection layer formation on GaN for enhancing light extraction from light-emitting diodes.
| Autor: | Dylewicz, R. rafal.dylewicz@lamresearch.com, Khokhar, A.1, Wasielewski, R.2, Mazur, P.2, Rahman, F. faiz.rahman@electrospell.com |
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| Zdroj: | Applied Physics B: Lasers & Optics. May2012, Vol. 107 Issue 2, p393-399. 7p. |
| Databáze: | Academic Search Ultimate |
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