Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures.
| Autor: | Britnel, L.1, Gorbachev, R. V.2, Jalil, R.2, Belle, B. D.2, Schedin, F.2, Mishchenko, A.1, Georgiou, T.1, Katsnelson, M. I.3, Eaves, L.4, Morozov, S. V.5, Peres, N. M. R.6,7, Leist, J.8, Geim, A. K.1,2 geim@manchester.ac.uk, Novoselov, K. S.1 kostya@manchester.ac.uk, Ponomarenko, L. A.1 leonid.ponomarenko@manchester.ac.uk |
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| Zdroj: | Science. 2/24/2012, Vol. 335 Issue 6071, p947-950. 4p. |
| Databáze: | Academic Search Ultimate |
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