μ[sup –]Spin Rotation Study of the Temperature-Dependent Relaxation Rate of Acceptor Centers in Silicon.

Autor: Mamedov, T. N., Andrianov, D. G., Gerlach, D., Gritsaı, K. I., Gorelkin, V. N., Cormann, O., Major, J., Stoıkov, A. V., Shevchik, M., Zimmerman, U.
Zdroj: JETP Letters. 5/25/2000, Vol. 71 Issue 10, p438. 4p.
Databáze: Academic Search Ultimate