Possibility of increasing the thermal stability of Si by doping with transition or rare-earth metals.
| Autor: | Glazov, V. M., Timoshina, G. G., Mikhaılova, M. S., Potemkin, A. Ya. |
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| Zdroj: | Semiconductors. Sep97, Vol. 31 Issue 9, p875. 4p. |
| Databáze: | Academic Search Ultimate |
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