Oxygen-Containing Radiation Defects in Si[sub 1 – ][sub x]Ge[sub x].
| Autor: | Pomozov, Yu. V., Sosnin, M. G., Khirunenko, L. I., Yashnik, V. I., Abrosimov, N. V., Schröder, W., Höhne, M. |
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| Zdroj: | Semiconductors. Sep2000, Vol. 34 Issue 9, p989. 5p. |
| Databáze: | Academic Search Ultimate |
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