Characterization of macrodefects in pure silcon carbide films using X-ray topography and Raman scattering.

Autor: Danishevskii, A. M., Tregubova, A. S., Lebedev, A. A.
Zdroj: Semiconductors. Oct97, Vol. 31 Issue 10, p1025. 5p.
Databáze: Academic Search Ultimate