Characterization of macrodefects in pure silcon carbide films using X-ray topography and Raman scattering.
Autor: | Danishevskii, A. M., Tregubova, A. S., Lebedev, A. A. |
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Zdroj: | Semiconductors. Oct97, Vol. 31 Issue 10, p1025. 5p. |
Databáze: | Academic Search Ultimate |
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