Effect of hydrogenation on the properties of metal–GaAs Schottky barrier contacts.
Autor: | Bozhkov, V. G., Kagadeı, V. A., Torkhov, N. A. |
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Zdroj: | Semiconductors. Nov98, Vol. 32 Issue 11, p1196. 5p. |
Databáze: | Academic Search Ultimate |
Externí odkaz: |