Luminescence properties of gallium nitride layers grown on silicon carbide substrates by gas-phase epitaxy in a chloride system.
| Autor: | Zubrilov, A. S., Mel’nik, Yu. V., Tsvetkov, D. V., Bugrov, V. E., Nikolaev, A. E., Stepanov, S. I., Dmitriev, V. A. |
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| Zdroj: | Semiconductors. May97, Vol. 31 Issue 5, p523. 4p. |
| Databáze: | Academic Search Ultimate |
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