Properties of periodic α-Si:H/a-SiN[sub x]:H structures obtained by nitridization of amorphous-silicon layers.

Autor: Bilenko, D. I., Belobrovaya, O. Ya., Galishnikova, Yu. N., Zharkova, É. A., Kazanova, N. P., Koldobanova, O. Yu., Khasina, E. I.
Zdroj: Semiconductors. Mar1998, Vol. 32 Issue 3, p297. 5p.
Databáze: Academic Search Ultimate