Radiation defect formation in Ge-doped silicon as a result of low-temperature irradiation.
| Autor: | Khirunenko, L. I., Shakhovtsov, V. I., Shumov, V. V. |
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| Zdroj: | Semiconductors. Feb98, Vol. 32 Issue 2, p120. 3p. |
| Databáze: | Academic Search Ultimate |
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