Lasing at a wavelength close to 1.3 μm in InAs quantum-dot structures.
| Autor: | Kovsh, A. R., Zhukov, A. E., Maleev, N. A., Mikhrin, S. S., Ustinov, V. M., Tsatsul’nikov, A. F., Maksimov, M. V., Volovik, B. V., Bedarev, D. A., Shernyakov, Yu. M., Kondrat’eva, E. Yu., Ledentsov, N. N., Kop’ev, P. S., Alferov, Zh. I., Bimberg, D. |
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| Zdroj: | Semiconductors. Aug99, Vol. 33 Issue 8, p929. 4p. |
| Databáze: | Academic Search Ultimate |
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