Electrically Active Centers in Si:Er Light-Emitting Layers Grown by Sublimation Molecular-Beam Epitaxy.

Autor: Shmagin, V. B., Andreev, B. A., Antonov, A. V., Krasil’nik, Z. F., Kuznetsov, V. P., Kuznetsov, O. A., Uskova, E. A., Ammerlaan, C. A. J., Pensl, G.
Zdroj: Semiconductors. Feb2002, Vol. 36 Issue 2, p171. 5p.
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