Erratum: “Silicon Dual-Drain Strain-Sensitive FETs” [Tech.Phys.45, 1276 (2000)].

Autor: Babichev, G. G., Kozlovskiı, S. I., Sharan, N. N.
Zdroj: Technical Physics. Mar2001, Vol. 46 Issue 3, p361. 1p.
Databáze: Academic Search Ultimate