Erratum: “Silicon Dual-Drain Strain-Sensitive FETs” [Tech.Phys.45, 1276 (2000)].
Autor: | Babichev, G. G., Kozlovskiı, S. I., Sharan, N. N. |
---|---|
Zdroj: | Technical Physics. Mar2001, Vol. 46 Issue 3, p361. 1p. |
Databáze: | Academic Search Ultimate |
Externí odkaz: |