Study of the Structural Perfection and Distribution/Redistribution of Silicon in Epitaxial GaAs Films Grown by Molecular Beam Epitaxy on (100), (111)A, and (111)B Substrates.
| Autor: | Galiev, G. B., Mokerov, V. G., Saraıkin, V. V., Slepnev, Yu. V., Shagimuratov, G. I., Imamov, R. M., Pashaev, É. M. |
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| Zdroj: | Technical Physics. Apr2001, Vol. 46 Issue 4, p411. 6p. |
| Databáze: | Academic Search Ultimate |
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