Parameter Optimization of a Silicon Pressure-Sensitive Element Based on Dual-Drain MIS Transistors.
Autor: | Babichev, G. G., Kozlovskiı, S. I., Romanov, V. A., Sharan, N. N. |
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Zdroj: | Technical Physics. Feb2001, Vol. 46 Issue 2, p254. 4p. |
Databáze: | Academic Search Ultimate |
Externí odkaz: |