Parameter Optimization of a Silicon Pressure-Sensitive Element Based on Dual-Drain MIS Transistors.

Autor: Babichev, G. G., Kozlovskiı, S. I., Romanov, V. A., Sharan, N. N.
Zdroj: Technical Physics. Feb2001, Vol. 46 Issue 2, p254. 4p.
Databáze: Academic Search Ultimate