Efficient high-power Ho:YAG laser directly in-band pumped by a GaSb-based laser diode stack at 1.9 μm.

Autor: Lamrini, S. samir.lamrini@rub.de, Koopmann, P., Schäfer, M.1, Scholle, K.1, Fuhrberg, P.1
Zdroj: Applied Physics B: Lasers & Optics. Feb2012, Vol. 106 Issue 2, p315-319. 5p. 1 Diagram, 6 Graphs.
Databáze: Academic Search Ultimate