Growth improvement of AgGaSe2 single crystal using the vertical Bridgman technique with steady ampoule rotation and its characterization

Autor: Anandha Babu, G.1 anandcgc@gmail.com, Subramaniyan@Raja, R.1, Karunagaran, N.1, Perumal Ramasamy, R.2, Ramasamy, P.1, Ganesamoorthy, S.3, Gupta, P.K.3
Zdroj: Journal of Crystal Growth. Jan2012, Vol. 338 Issue 1, p42-46. 5p.
Databáze: Academic Search Ultimate
Externí odkaz: