Effect of proton irradiation on AlGaN/AlN/GaN HEMTs.

Autor: Bataiev, Mykola1, Bataiev, Yurii2, Brillson, Leonard2
Zdroj: Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011, Vol. 14 Issue 3, p279-286. 8p.
Databáze: Academic Search Ultimate