On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors.
| Autor: | Gaidar, G. P.1 gaidar@kinr.kiev.ua |
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| Zdroj: | Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009, Vol. 12 Issue 4, p324-327. 4p. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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