X-ray study of dopant state in highly doped semiconductor single crystals.

Autor:	Shul'pina, I. L.1 iren.shulpina@mail.ioffe.ru, Kyutt, R. N.1, Ratnikov, V. V.1, Prokhorov, I. A.2, Bezbakh, I. Zh.2, Shcheglov, M. P.1
Zdroj:	Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011, Vol. 14 Issue 1, p62-70. 9p.
Databáze:	Academic Search Ultimate
Externí odkaz:	Zobrazit plný text záznamu