Variational analysis of the Rashba splitting in III-V semiconductor inversion layers.

Autor: Sandoval, M. A. Toloza1, da Silva, A. Ferreira1, de Andrada e Silva, E. A.2 erasmo@las.inpe.br, La Rocca, G. C.3
Zdroj: Physical Review B: Condensed Matter & Materials Physics. Jun2011, Vol. 83 Issue 23, p235315:1-235315:6. 6p.
Databáze: Academic Search Ultimate