Effect of 100MeV Ni9+ ion irradiation on MOCVD grown n-GaN

Autor: Suresh Kumar, V.1,2 suresh.k@imr.tohoku.ac.jp, Kumar, J.1, Puviarasu, P.1, Munawar Basha, S.1, Kanjilal, D.3, Asokan, K.3
Zdroj: Physica B. Nov2011, Vol. 406 Issue 22, p4210-4213. 4p.
Databáze: Academic Search Ultimate