MeV-boron implanted layer, oxygen precipitates and poly-silicon back side combined in one silicon wafer: at what defect will Cu and Ni be gettered?
| Autor: | Hölzl, R., Fabry, L., Range, K.-J., Pech, R. |
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| Zdroj: | Applied Physics A: Materials Science & Processing. 2002, Vol. 74 Issue 4, p545. 7p. |
| Databáze: | Academic Search Ultimate |
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