Frequency and temperature dependences of capacitance-voltage characteristics of InGaN/GaN light-emitting structures with multiple quantum wells.
| Autor: | Soltanovich, O.1, Shmidt, N.2, Yakimov, E.1 yakimov@iptm.ru |
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| Zdroj: | Semiconductors. Feb2011, Vol. 45 Issue 2, p221-224. 4p. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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