Temperature behaviour of the substrate surface during growth of nanocrystalline silicon carbide films by deposition of 120 eV carbon and silicon ions
| Autor: | Semenov, A.V. semenov@isc.kharkov.ua, Puzikov, V.M.1 |
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| Zdroj: | Vacuum. Jan2011, Vol. 85 Issue 6, p672-676. 5p. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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