Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers (λ = 900-920 nm).
| Autor: | Ladugin, M. A.1, Lyutetskiy, A. V.2, Marmalyuk, A. A.1, Padalitsa, A. A.1, Pikhtin, N. A.2, Podoskin, A. A.2, Rudova, N. A.2, Slipchenko, S. O.2 serghpl@mail.ioffe.ru, Shashkin, I. S.2, Bondarev, A. D.2, Tarasov, I. S.2 |
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| Zdroj: | Semiconductors. Oct2010, Vol. 44 Issue 10, p1370-1374. 5p. 2 Charts, 4 Graphs. |
| Databáze: | Academic Search Ultimate |
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