The variance law and scattering mechanism of charge carriers in Zn-doped p-InGaSb.
| Autor: | Zeynalov, C. A.1, Aliev, F. F.1 farzali@physics.ab.az, Damirova, S. Z.1, Tairov, B. A.1 |
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| Zdroj: | Semiconductors. Sep2010, Vol. 44 Issue 9, p1149-1152. 4p. 1 Chart, 5 Graphs. |
| Databáze: | Academic Search Ultimate |
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