Effect of self-assembled Ge nanostructures on Si surface electronic properties.

Autor:	Kamins, T.I., Nauka, K., Williams, R.S.
Zdroj:	Applied Physics A: Materials Science & Processing. 2001, Vol. 73 Issue 1, p1. 9p.
Databáze:	Academic Search Ultimate
Externí odkaz:	Zobrazit plný text záznamu