Structural and electrical properties of SiGe-on-insulator substrates fabricated by direct bonding.

Autor:	Grekhov, I. V.1, Kostina, L. S.1 konst@mail.ioffe.ru, Argunova, T. S.1,2, Belyakova, E. I.1, Rozkov, A. V.1, Shmidt, N. M.1, Yusupova, Sh. A.1, Je, J. H.2
Zdroj:	Semiconductors. Aug2010, Vol. 44 Issue 8, p1101-1105. 5p. 3 Black and White Photographs, 1 Chart, 2 Graphs.
Databáze:	Academic Search Ultimate
Externí odkaz:	Zobrazit plný text záznamu