Enhanced growth rates and reduced parasitic deposition by the substitution of Cl2 for HCl in GaN HVPE

Autor:	Bohnen, Tim1, Ashraf, Hina1, van Dreumel, Gerbe W.G.1, Verhagen, Sjoerd1, Weyher, Jan L.1, Hageman, Paul R. P.Hageman@science.ru.nl, Vlieg, Elias1
Zdroj:	Journal of Crystal Growth. Sep2010, Vol. 312 Issue 18, p2542-2550. 9p.
Databáze:	Academic Search Ultimate
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect