Photoelectrical characteristics of as-grown highresistance GaAs single crystals.

Autor: Budnitskii, D. L.1, Koretskaya, O. B.1, Tolbanov, O. P.1 tolbanov@elefot.tsu.ru, Tyazhev, A. V.1
Zdroj: Russian Physics Journal. Jan2010, Vol. 53 Issue 1, p44-48. 5p. 2 Charts, 2 Graphs.
Databáze: Academic Search Ultimate