Effects of composition on dislocation microstructure and stress in Si-doped Al x Ga1−x N
| Autor: | Manning, I.C.1, Weng, X.2, Fanton, M.A.3, Snyder, D.W.3, Redwing, J.M.1,2 jmr31@psu.edu |
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| Zdroj: | Journal of Crystal Growth. Apr2010, Vol. 312 Issue 8, p1301-1306. 6p. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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