High-power diode lasers (λ = 1.7–1.8 µm) based on asymmetric quantum-well separate-confinement InGaAsP/InP heterostructures.

Autor:	Lyutetskiy, A. V.1, Pikhtin, N. A.1 nike@hpld.ioffe.ru, Fetisova, N. V.1, Leshko, A. Yu.1, Slipchenko, S. O.1, Sokolova, Z. N.1, Ryaboshtan, Yu. A.2, Marmalyuk, A. A.2, Tarasov, I. S.1
Zdroj:	Semiconductors. Dec2009, Vol. 43 Issue 12, p1602-1605. 4p. 3 Graphs.
Databáze:	Academic Search Ultimate
Externí odkaz:	Zobrazit plný text záznamu