Effect of measuring factors on ferroelectric properties of Bi3.15Nd0.85Ti3O12 thin films prepared by sol–gel method for non-volatile memory.
| Autor: | Dongyun Guo1, Chuanbin Wang1, Qiang Shen1, Lianmeng Zhang1 guody@whut.edu.cn, Meiya Li2, Jun Liu2 |
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| Zdroj: | Applied Physics A: Materials Science & Processing. Dec2009, Vol. 97 Issue 4, p877-881. 5p. 1 Color Photograph, 6 Graphs. |
| Databáze: | Academic Search Ultimate |
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