Two-dimensional numerical simulation of radio frequency sputter amorphous In–Ga–Zn–O thin-film transistors.

Autor: Fung, Tze-Ching1, Chuang, Chiao-Shun1, Chen, Charlene1, Abe, Katsumi2, Cottle, Robert3, Townsend, Mark3, Kumomi, Hideya2, Kanicki, Jerzy1
Zdroj: Journal of Applied Physics. Oct2009, Vol. 106 Issue 8, p084511-1-084511-10. 10p. 1 Diagram, 1 Chart, 11 Graphs.
Databáze: Academic Search Ultimate