Investigation of self-assembled monolayer treatment on SiO2 gate insulator of poly(3-hexylthiophene) thin-film transistors

Autor:	Horii, Yoshinori1,2, Ikawa, Mitsuhiro1, Sakaguchi, Koichi1, Chikamatsu, Masayuki1 m-chikamatsu@aist.go.jp, Yoshida, Yuji1, Azumi, Reiko1, Mogi, Hiroshi3,4, Kitagawa, Masahiko5, Konishi, Hisatoshi2, Yase, Kiyoshi1
Zdroj:	Thin Solid Films. Nov2009, Vol. 518 Issue 2, p642-646. 5p.
Databáze:	Academic Search Ultimate
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect