The mechanism of generation of the donor- and acceptor-type defects in the n-TiNiSn semiconductor heavily doped with Co impurity.
| Autor: | Romaka, V. A.1,2 vromaka@polynet.lviv.ua, Stadnyk, Yu. V.3, Fruchart, D.4, Dominuk, T. I.2, Romaka, L. P.3, Rogl, P.5, Goryn, A. M.3 |
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| Zdroj: | Semiconductors. Sep2009, Vol. 43 Issue 9, p1124-1130. 7p. 6 Graphs. |
| Databáze: | Academic Search Ultimate |
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