Effect of the ionization energy loss density of high-energy bismuth, krypton, and xenon ions on the development of hydrogen blisters in silicon.
| Autor: | Reutov, V. F.1 reutov@jinr.ru, Zaluzhnyi, A. G.2, Kobzev, A. P.1, Sokhatskii, A. S.1 |
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| Zdroj: | Technical Physics. Sep2009, Vol. 54 Issue 9, p1306-1313. 8p. 5 Black and White Photographs, 2 Graphs. |
| Databáze: | Academic Search Ultimate |
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