Cryogenic etching of n-type silicon with p+ doped walls with the TGZM process through the Al/Si eutectic alloy

Autor: Oubensaid, E.H.1, Duluard, C.Y.1, Pichon, L.E.1, Morillon, B.2, Boufnichel, M.2, Lefaucheux, P.1, Dussart, R.1 remi.dussart@univ-orleans.fr, Ranson, P.1
Zdroj: Microelectronic Engineering. Nov2009, Vol. 86 Issue 11, p2262-2269. 8p.
Databáze: Academic Search Ultimate
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