Mounting-induced strains in red-emitting (Al)InGaP laser diodes tuned by pressure.

Autor: Piechal, Bernard1 bernard@unipress.waw.pl, Tomm, Jens W.2 tomm@mbi-berlin.de, Bercha, Artem1, Trzeciakowski, Witold1, Reufer, Martin3 Martin.Reufer@osram-os.com, Gomez-Iglesias, Alvaro3
Zdroj: Applied Physics A: Materials Science & Processing. Oct2009, Vol. 97 Issue 1, p179-184. 6p. 1 Chart, 3 Graphs.
Databáze: Academic Search Ultimate
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